CGHV96100F2 (Package Type — 440217)

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CGHV96100F2 (Package Type — 440217)
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CGHV96100F2
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Modified on: June 09,2019  
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Supplier part number: CGHV96100F2
Name:CGHV96100F2 (Package Type — 440217)
Description:CGHV96100F2 100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMT Cree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FET offers excellent power added efficiency in comparison to other technologies. GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to GaAs transistors. This IM FET is available in a metal/ceramic flanged package for optimal electrical and thermal performance.
Supplier part number:CGHV96100F2
    
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Hossein Yousefi

User since: 6/27/2013
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