STMicroelectronics

EEPROM Memory IC, 5-UFDFPN (1.7x1.4)

TXC

3.2x2.5 Crystal oscillatorspecifically 7Q series

Texas Instruments

TSOP, 8-Leads, Body 3.00x3.00mm, Pitch 0.65mm, Thermal Pad 1.89x1.57mm, IPC Medium Density

CDRH103R

Sumida Inductor CDRH103R

Laird

Common mode choke

Analog Devices

CP-16-22 Package (3.1mm x 3.1mm) for ADP5074 As requested

Pulse

10/100/1000 Base-T Pulse Transformer. Pulse HX5008FNL. Used the manufacturers model, but coloured it and inserted logo and part number.

Littelfuse

SOT035P100X100-05

TriQuint

General DescriptionThe TriQuint TGA2704-SM provides 21 dB of smallsignal gain and 8W of output power across 9-11GHz. TGA2704-SM is designed using TriQuint’sproven standard 0.25μm gate pHEMT 3MI productionprocess.The TGA2704-SM features a ceramic QFN designedfor surface mount to a printed circuit board.Fully matched to 50 ohms and with integrated DCblocking capacitors on both I/O ports, the TGA2704-SM is ideally suited to support both commercialand defense related applicationsLead-free and RoHS compliant.Applications- Marine and Air Radar, Traffic Control- Weather Monitoring- Port Security- Point-to-Point Radio- CommunicationsProduct Features- Frequency Range: 9 - 11 GHz- Saturated Output Power: 39 dBm- Small Signal Gain: 21 dB- Bias: Vd = 9 V, Idq = 1.05 A, Vg = -0.74 V typical

CREE

CGHV96100F2100 W, 8.4 - 9.6 GHz, 50-ohm, Input/Output Matched GaN HEMTCree’s CGHV96100F2 is a gallium nitride (GaN) High Electron Mobility Transistor(HEMT) on Silicon Carbide (SiC) substrates. This GaN Internally Matched (IM) FEToffers excellent power added efficiency in comparison to other technologies. GaNhas superior properties compared to silicon or gallium arsenide, including higherbreakdown voltage, higher saturated electron drift velocity and higher thermalconductivity. GaN HEMTs also offer greater power density and wider bandwidthscompared to GaAs transistors. This IM FET is available in a metal/ceramic flangedpackage for optimal electrical and thermal performance.